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A Product Line of
Diodes Incorporated
ZVN3310F
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
V DSS
V GSS
I D
I DM
Value
100
±20
100
2
Units
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation @T A = 25°C
Operating and Storage Temperature Range
Symbol
P D
T J, T STG
Value
330
-55 to +150
Unit
mW
°C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
100
?
?
V
I D = 1mA, V GS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate Threshold Voltage
T J = 25 ° C
T J = 125 ° C (Note 4)
I DSS
I GSS
V GS(th)
?
?
0.8
?
?
?
1
50
20
2.4
μ A
nA
V
V DS = 100V, V GS = 0V
V DS = 80V, V GS = 0V
V GS = ± 20V, V DS = 0V
V DS = V GS , I D = 1mA
ON CHARACTERISTICS (Note 3)
On-State Drain Current
Static Drain-Source On-Resistance
I D (ON)
R DS (ON)
500
?
?
?
?
10
mA
?
V DS = 25V, V GS = 10V
V GS = 10V, I D = 500mA
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
g fs
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
100
?
?
?
?
?
?
?
?
?
?
?
3
5
4
5
?
40
15
5
5
7
6
7
mS
pF
ns
V DS = 25V, I D = 500mA
V DS = 25V, V GS = 0V
f = 1.0MHz
V DD ≈ 25V, I D = 500mA
Notes:
3. Measured under pulsed conditions. Width = 300 μ s. Duty cycle ≤ 2%
4. Sample test.
5. Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator.
ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
www.diodes.com
October 2009
? Diodes Incorporated
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